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AFN8205 MOSFET Transistor

The AFN8205 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN8205 transistor as follows.

Circuit diagram symbol of the AFN8205 transistor

AFN8205 Transistor Specification

Transistor Code AFN8205
Transistor Type MOSFET
Control Channel Type N-Channel
Package TSOP-6
Transistor SMD Code 05*
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.029Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 120pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 16nS
Gate-Threshold Voltage (Maximum) 0.8V
Total Gate Charge 8.2nC

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