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AFN7002DS MOSFET Transistor

The AFN7002DS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN7002DS transistor as follows.

Circuit diagram symbol of the AFN7002DS transistor

AFN7002DS Transistor Specification

Transistor Code AFN7002DS
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT-363
Transistor SMD Code 702
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 0.64A
Drain-Source On-State Resistance (Maximum) RDS(on) 3Ohm
Power Dissipation (Maximum) PD 0.3W
Drain-Source Capacitance 10pF
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 2V

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