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AFN6830 MOSFET Transistor

The AFN6830 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN6830 transistor as follows.

Circuit diagram symbol of the AFN6830 transistor

AFN6830 Transistor Specification

Transistor Code AFN6830
Transistor Type MOSFET
Control Channel Type N-Channel
Package TSOP-6
Transistor SMD Code 30*
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.075Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 40pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 1.8V
Total Gate Charge 2.3nC

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