AFN6562 MOSFET Transistor

The AFN6562 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN6562 transistor as follows.

AFN6562 Transistor Specification

Transistor Code		AFN6562
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSOP-6
Transistor SMD Code		62*
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	3.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.07Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		1.2V
Total Gate Charge		2.3nC

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