AFN6561 MOSFET Transistor

The AFN6561 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN6561 transistor as follows.

AFN6561 Transistor Specification

Transistor Code		AFN6561
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSOP-6
Transistor SMD Code		61*
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.075Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		2.3nC

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