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AFN5908W MOSFET Transistor

The AFN5908W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN5908W transistor as follows.

Circuit diagram symbol of the AFN5908W transistor

AFN5908W Transistor Specification

Transistor Code AFN5908W
Transistor Type MOSFET
Control Channel Type N-Channel
Package DFN3X2
Transistor SMD Code 58*
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 6.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.03Ohm
Power Dissipation (Maximum) PD 6.5W
Drain-Source Capacitance 160pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 0.8V
Total Gate Charge 6.2nC

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