AFN5908W MOSFET Transistor

The AFN5908W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN5908W transistor as follows.

AFN5908W Transistor Specification

Transistor Code		AFN5908W
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN3X2
Transistor SMD Code		58*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	6.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.03Ohm
Power Dissipation (Maximum)	PD	6.5W
Drain-Source Capacitance		160pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		0.8V
Total Gate Charge		6.2nC

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