AFN5808W MOSFET Transistor

The AFN5808W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN5808W transistor as follows.

AFN5808W Transistor Specification

Transistor Code		AFN5808W
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN2X5
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	6.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.032Ohm
Power Dissipation (Maximum)	PD	1.6W
Drain-Source Capacitance		160pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		0.8V
Total Gate Charge		6.2nC

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