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AFN5800W MOSFET Transistor

The AFN5800W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN5800W transistor as follows.

Circuit diagram symbol of the AFN5800W transistor

AFN5800W Transistor Specification

Transistor Code AFN5800W
Transistor Type MOSFET
Control Channel Type N-Channel
Package DFN2X5
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.019Ohm
Power Dissipation (Maximum) PD 1.6W
Drain-Source Capacitance 120pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 16nS
Gate-Threshold Voltage (Maximum) 0.8V
Total Gate Charge 8.2nC

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