AFN501DEA MOSFET Transistor

The AFN501DEA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN501DEA transistor as follows.

AFN501DEA Transistor Specification

Transistor Code		AFN501DEA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-23
Transistor SMD Code		501DEX
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.03A
Drain-Source On-State Resistance (Maximum)	RDS(on)	700Ohm
Power Dissipation (Maximum)	PD	0.5W
Drain-Source Capacitance		9.1pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		90nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		1.8nC

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