AFN4900W MOSFET Transistor

The AFN4900W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN4900W transistor as follows.

AFN4900W Transistor Specification

Transistor Code		AFN4900W
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP-8P
Transistor SMD Code		4900W
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.115Ohm
Power Dissipation (Maximum)	PD	2.8W
Drain-Source Capacitance		50pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		6nC

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