AFN4808W MOSFET Transistor

The AFN4808W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN4808W transistor as follows.

AFN4808W Transistor Specification

Transistor Code		AFN4808W
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN2X3
Transistor SMD Code		W08*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	6.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.03Ohm
Power Dissipation (Maximum)	PD	1.56W
Drain-Source Capacitance		160pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		0.8V
Total Gate Charge		6.2nC

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