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AFN3814W MOSFET Transistor

The AFN3814W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN3814W transistor as follows.

Circuit diagram symbol of the AFN3814W transistor

AFN3814W Transistor Specification

Transistor Code AFN3814W
Transistor Type MOSFET
Control Channel Type N-Channel
Package DFN3X3
Transistor SMD Code 3814W
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 14A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.014Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 285pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 1V
Total Gate Charge 13nC

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