AFN3806W MOSFET Transistor

The AFN3806W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN3806W transistor as follows.

AFN3806W Transistor Specification

Transistor Code		AFN3806W
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN3X3
Transistor SMD Code		3806W
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.026Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		75pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		0.8V
Total Gate Charge		0.65nC

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