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AFN3460 MOSFET Transistor

The AFN3460 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN3460 transistor as follows.

Circuit diagram symbol of the AFN3460 transistor

AFN3460 Transistor Specification

Transistor Code AFN3460
Transistor Type MOSFET
Control Channel Type N-Channel
Package TSOP-6
Transistor SMD Code 60*
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 5.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.026Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 235pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 1V
Total Gate Charge 13nC

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