AFN3309WS MOSFET Transistor

The AFN3309WS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN3309WS transistor as follows.

AFN3309WS Transistor Specification

Transistor Code		AFN3309WS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN3X3
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		210pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		8nC

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