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AFN3306WS MOSFET Transistor

The AFN3306WS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN3306WS transistor as follows.

Circuit diagram symbol of the AFN3306WS transistor

AFN3306WS Transistor Specification

Transistor Code AFN3306WS
Transistor Type MOSFET
Control Channel Type N-Channel
Package DFN3X3
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 40A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0056Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 550pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 50nC

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