AFN3030 MOSFET Transistor

The AFN3030 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN3030 transistor as follows.

AFN3030 Transistor Specification

Transistor Code		AFN3030
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Transistor SMD Code		3030
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.03Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		80pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		4nC

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