AFN2912W MOSFET Transistor

The AFN2912W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN2912W transistor as follows.

AFN2912W Transistor Specification

Transistor Code		AFN2912W
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN2X2-6L
Transistor SMD Code		W12*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.05Ohm
Power Dissipation (Maximum)	PD	6.5W
Drain-Source Capacitance		115pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		0.8V
Total Gate Charge		4.2nC

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