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AFN2376 MOSFET Transistor

The AFN2376 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN2376 transistor as follows.

Circuit diagram symbol of the AFN2376 transistor

AFN2376 Transistor Specification

Transistor Code AFN2376
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT-23
Transistor SMD Code 76*
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.07Ohm
Power Dissipation (Maximum) PD 1.25W
Drain-Source Capacitance 40pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 6nC

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