AFN2330 MOSFET Transistor

The AFN2330 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN2330 transistor as follows.

AFN2330 Transistor Specification

Transistor Code		AFN2330
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-23
Transistor SMD Code		30*
Drain-Source Voltage (Maximum)	VDS	90V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.19Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		22pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		2.8nC

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