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AFN2312A MOSFET Transistor

The AFN2312A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN2312A transistor as follows.

Circuit diagram symbol of the AFN2312A transistor

AFN2312A Transistor Specification

Transistor Code AFN2312A
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT-23
Transistor SMD Code 12*
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.045Ohm
Power Dissipation (Maximum) PD 1.25W
Drain-Source Capacitance 120pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 16nS
Gate-Threshold Voltage (Maximum) 0.8V
Total Gate Charge 8.2nC

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