AFN1012E MOSFET Transistor

The AFN1012E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN1012E transistor as follows.

AFN1012E Transistor Specification

Transistor Code		AFN1012E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-523
Transistor SMD Code		X
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	0.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.36Ohm
Power Dissipation (Maximum)	PD	0.27W
Drain-Source Capacitance		20pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		0.8V
Total Gate Charge		1.06nC

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