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AFN04N60T220T MOSFET Transistor

The AFN04N60T220T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN04N60T220T transistor as follows.

Circuit diagram symbol of the AFN04N60T220T transistor

AFN04N60T220T Transistor Specification

Transistor Code AFN04N60T220T
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.4Ohm
Power Dissipation (Maximum) PD 100W
Drain-Source Capacitance 57pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 26.2nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 8.16nC

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