AFN02N60T251T MOSFET Transistor

The AFN02N60T251T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN02N60T251T transistor as follows.

AFN02N60T251T Transistor Specification

Transistor Code		AFN02N60T251T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4.2Ohm
Power Dissipation (Maximum)	PD	86W
Drain-Source Capacitance		35.7pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		23.4nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		5.67nC

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