AFC6601 MOSFET Transistor

The AFC6601 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFC6601 transistor as follows.

AFC6601 Transistor Specification

Transistor Code		AFC6601
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		TSOP-6
Transistor SMD Code		01*
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.068Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		2.3nC

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