AFC5606 MOSFET Transistor

The AFC5606 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFC5606 transistor as follows.

AFC5606 Transistor Specification

Transistor Code		AFC5606
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		TO-252-4L
Transistor SMD Code		5606
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.042Ohm
Power Dissipation (Maximum)	PD	2.8W
Drain-Source Capacitance		85pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		10nC

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