AFC2519W MOSFET Transistor

The AFC2519W is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFC2519W transistor as follows.

AFC2519W Transistor Specification

Transistor Code		AFC2519W
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		DFN2X2-6L
Transistor SMD Code		W19*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.05Ohm
Power Dissipation (Maximum)	PD	6.5W
Drain-Source Capacitance		115pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		0.8V
Total Gate Charge		4.2nC

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