8N80 MOSFET Transistor

The 8N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 8N80 transistor as follows.

8N80 Transistor Specification

Transistor Code		8N80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220_TO-220F_TO-22
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.18Ohm
Power Dissipation (Maximum)	PD	178W
Drain-Source Capacitance		135pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		110nS

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