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8N60F MOSFET Transistor

The 8N60F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 8N60F transistor as follows.

Circuit diagram symbol of the 8N60F transistor

8N60F Transistor Specification

Transistor Code 8N60F
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220F
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.2Ohm
Power Dissipation (Maximum) PD 48W
Drain-Source Capacitance 93pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 58nS
Total Gate Charge 26.8nC

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