8N60AF MOSFET Transistor

The 8N60AF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 8N60AF transistor as follows.

8N60AF Transistor Specification

Transistor Code		8N60AF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.1Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		98.2pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		27.3nS

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