7N65AF MOSFET Transistor

The 7N65AF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 7N65AF transistor as follows.

7N65AF Transistor Specification

Transistor Code		7N65AF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		98.1pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17.7nS

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