630A MOSFET Transistor

The 630A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 630A transistor as follows.

630A Transistor Specification

Transistor Code		630A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251_TO252
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.25Ohm
Power Dissipation (Maximum)	PD	83W
Drain-Source Capacitance		51.5pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10.7nS

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