free stats

Home » Electronics » FET » 5LN01M Transistor

5LN01M MOSFET Transistor

The 5LN01M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 5LN01M transistor as follows.

Circuit diagram symbol of the 5LN01M transistor

5LN01M Transistor Specification

Transistor Code 5LN01M
Transistor Type MOSFET
Control Channel Type N-Channel
Package MCP
Transistor SMD Code YB
Drain-Source Voltage (Maximum) VDS 50V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 0.1A
Drain-Source On-State Resistance (Maximum) RDS(on) 6Ohm
Power Dissipation (Maximum) PD 0.15W
Operating Junction Temperature (Maximum) 150°C

5LN01M MOSFET Transistor Overview

The 5LN01M is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a MCP package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the 5LN01M MOSFET

Followings are the key electrical characteristics of the 5LN01M MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in 5LN01M MOSFET transistor is 50V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the 5LN01M MOSFET transistor is 10V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the 5LN01M MOSFET transistor is 0.1A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of 5LN01M MOSFET transistor when the transistor is fully turned on is 6 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the 5LN01M MOSFET transistor can comfortably transfer into heat without breaking is 0.15W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the 5LN01M MOSFET transistor is switched on is . This is the rate at which 5LN01M MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the 5LN01M MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of 5LN01M MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the 5LN01M MOSFET transistor. You can download the official 5LN01M MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

2SK1065 2SK1065 MOSFET Transistor 2SK1066 2SK1066 MOSFET Transistor 2SK1067 2SK1067 MOSFET Transistor 2SK1068 2SK1068 MOSFET Transistor 2SK1069 2SK1069 MOSFET Transistor 2SK1332 2SK1332 MOSFET Transistor 2SK1375 2SK1375 MOSFET Transistor 2SK1839 2SK1839 MOSFET Transistor 2SK2091 2SK2091 MOSFET Transistor 2SK2219 2SK2219 MOSFET Transistor 3LN01M 3LN01M MOSFET Transistor 3LP01M 3LP01M MOSFET Transistor 5LP01M 5LP01M MOSFET Transistor