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4N60P MOSFET Transistor

The 4N60P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 4N60P transistor as follows.

Circuit diagram symbol of the 4N60P transistor

4N60P Transistor Specification

Transistor Code 4N60P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.5Ohm
Power Dissipation (Maximum) PD 100W
Drain-Source Capacitance 66pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 19nS

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