3SK169Q MOSFET Transistor

The 3SK169Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 3SK169Q transistor as follows.

3SK169Q Transistor Specification

Transistor Code		3SK169Q
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO
Drain-Source Voltage (Maximum)	VDS	15V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.03A
Drain-Source On-State Resistance (Maximum)	RDS(on)	200Ohm
Power Dissipation (Maximum)	PD	0.15W
Drain-Source Capacitance		5.7pF
Operating Junction Temperature (Maximum)		125°C

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