3N80 MOSFET Transistor

The 3N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 3N80 transistor as follows.

3N80 Transistor Specification

Transistor Code		3N80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220_TO-251_TO-252
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.2Ohm
Power Dissipation (Maximum)	PD	70W
Drain-Source Capacitance		57pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		27nS

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