3N213 MOSFET Transistor

The 3N213 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 3N213 transistor as follows.

3N213 Transistor Specification

Transistor Code		3N213
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO72
Drain-Source Voltage (Maximum)	VDS	35V
Gate-Source Voltage (Maximum)	VGS	40V
Drain Current (Maximum)	ID	0.05A
Drain-Source On-State Resistance (Maximum)	RDS(on)	100Ohm
Power Dissipation (Maximum)	PD	0.36W
Operating Junction Temperature (Maximum)		150°C

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