3N212 MOSFET Transistor

The 3N212 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 3N212 transistor as follows.

3N212 Transistor Specification

Transistor Code		3N212
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO72
Drain-Source Voltage (Maximum)	VDS	27V
Gate-Source Voltage (Maximum)	VGS	35V
Drain Current (Maximum)	ID	0.05A
Drain-Source On-State Resistance (Maximum)	RDS(on)	100Ohm
Power Dissipation (Maximum)	PD	0.36W
Operating Junction Temperature (Maximum)		200°C

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