3N200 MOSFET Transistor

The 3N200 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 3N200 transistor as follows.

3N200 Transistor Specification

Transistor Code		3N200
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO72
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	6V
Drain Current (Maximum)	ID	0.05A
Drain-Source On-State Resistance (Maximum)	RDS(on)	100Ohm
Power Dissipation (Maximum)	PD	0.33W
Drain-Source Capacitance		2pF
Operating Junction Temperature (Maximum)		175°C

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