3N169 MOSFET Transistor

The 3N169 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 3N169 transistor as follows.

3N169 Transistor Specification

Transistor Code		3N169
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO72
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	35V
Drain Current (Maximum)	ID	0.03A
Drain-Source On-State Resistance (Maximum)	RDS(on)	195Ohm
Power Dissipation (Maximum)	PD	0.8W
Drain-Source Capacitance		5pF
Operating Junction Temperature (Maximum)		150°C

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