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3N169 MOSFET Transistor

The 3N169 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 3N169 transistor as follows.

Circuit diagram symbol of the 3N169 transistor

3N169 Transistor Specification

Transistor Code 3N169
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO72
Drain-Source Voltage (Maximum) VDS 25V
Gate-Source Voltage (Maximum) VGS 35V
Drain Current (Maximum) ID 0.03A
Drain-Source On-State Resistance (Maximum) RDS(on) 195Ohm
Power Dissipation (Maximum) PD 0.8W
Drain-Source Capacitance 5pF
Operating Junction Temperature (Maximum) 150°C

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