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3N159 MOSFET Transistor

The 3N159 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 3N159 transistor as follows.

Circuit diagram symbol of the 3N159 transistor

3N159 Transistor Specification

Transistor Code 3N159
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO72
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 0.05A
Drain-Source On-State Resistance (Maximum) RDS(on) 240Ohm
Power Dissipation (Maximum) PD 0.4W
Drain-Source Capacitance 7pF
Operating Junction Temperature (Maximum) 175°C

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