3N126 MOSFET Transistor

The 3N126 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 3N126 transistor as follows.

3N126 Transistor Specification

Transistor Code		3N126
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO72
Drain-Source Voltage (Maximum)	VDS	50V
Gate-Source Voltage (Maximum)	VGS	50V
Drain Current (Maximum)	ID	0.02A
Drain-Source On-State Resistance (Maximum)	RDS(on)	500Ohm
Power Dissipation (Maximum)	PD	0.3W
Drain-Source Capacitance		14pF
Operating Junction Temperature (Maximum)		175°C

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