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30P10A MOSFET Transistor

The 30P10A is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 30P10A transistor as follows.

Circuit diagram symbol of the 30P10A transistor

30P10A Transistor Specification

Transistor Code 30P10A
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO220_TO251_TO252
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 30A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.045Ohm
Power Dissipation (Maximum) PD 120W
Drain-Source Capacitance 790pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 80nS

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