2SK3900 MOSFET Transistor

The 2SK3900 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SK3900 transistor as follows.

2SK3900 Transistor Specification

Transistor Code		2SK3900
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	82A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	104W
Drain-Source Capacitance		660pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS
Total Gate Charge		65.5nC

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