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2SK3666-2-TB-E MOSFET Transistor

The 2SK3666-2-TB-E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SK3666-2-TB-E transistor as follows.

Circuit diagram symbol of the 2SK3666-2-TB-E transistor

2SK3666-2-TB-E Transistor Specification

Transistor Code 2SK3666-2-TB-E
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT23
Transistor SMD Code JK
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 0.01A
Drain-Source On-State Resistance (Maximum) RDS(on) 200Ohm
Power Dissipation (Maximum) PD 0.2W
Operating Junction Temperature (Maximum) 150°C

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