2SK2896-01L MOSFET Transistor

The 2SK2896-01L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SK2896-01L transistor as follows.

2SK2896-01L Transistor Specification

Transistor Code		2SK2896-01L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO262
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	45A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		930pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS

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