2SK2669 MOSFET Transistor

The 2SK2669 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SK2669 transistor as follows.

2SK2669 Transistor Specification

Transistor Code		2SK2669
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	900V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.8Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		105pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		55*nS

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