2SK2008 MOSFET Transistor

The 2SK2008 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SK2008 transistor as follows.

2SK2008 Transistor Specification

Transistor Code		2SK2008
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3PFM
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.12Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		1000pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		125nS

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