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2SK1169 MOSFET Transistor

The 2SK1169 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SK1169 transistor as follows.

Circuit diagram symbol of the 2SK1169 transistor

2SK1169 Transistor Specification

Transistor Code 2SK1169
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO3P
Drain-Source Voltage (Maximum) VDS 450V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.25Ohm
Power Dissipation (Maximum) PD 120W
Drain-Source Capacitance 780pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 115nS

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