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2SK1119 MOSFET Transistor

The 2SK1119 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SK1119 transistor as follows.

Circuit diagram symbol of the 2SK1119 transistor

2SK1119 Transistor Specification

Transistor Code 2SK1119
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220AB
Drain-Source Voltage (Maximum) VDS 1000V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 3.8Ohm
Power Dissipation (Maximum) PD 100W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 3.5V
Total Gate Charge 60nC

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